深圳市吉芯泽科技有限公司

▌产品型号

※ NAND FLASH + LPDDR4X SDRAM

高通SA522， SA525M 8+8和 16+16 已经认证

NAND Density Organization Voltage DRAM Density Organization Voltage NAND Page
+SpareSize DRAM Speed Package Part Number Availability

8Gbit(DDP) 512Mb x 8 1.8V 8Gbit(DDP) 256Mbx16X2 1.8V/1.1V/0.6V 4KB + 256B 2133MHz 8x9.5mm 149ball FMN8UF8UDP-4AIK Production

8Gbit(DDP) 512Mb x 8 1.8V 4Gbit 256Mb x 16 1.8V/1.1V/0.6V 4KB + 256B 2133MHz 8x9.5mm 149ball FMN8UF4SDP-4AIK Contact

4Gbit 512Mb x 8 1.8V 8Gbit(DDP) 256Mbx16X2 1.8V/1.1V/0.6V 4KB + 256B 2133MHz 8x9.5mm 149ball FMN4EF8UDP-4AIK Contact

4Gbit 512Mb x 8 1.8V 4Gbit 256Mbx16 1.8V/1.1V/0.6V 4KB + 256B 2133MHz 8x9.5mm 149ball FMN4EF4SDP-4AIK Production

4Gbit 512Mb x 8 1.8V 2Gbit 128Mbx16 1.8V/1.1V/0.6V 4KB + 256B 1866MHz 8x9.5mm 149ball FMN4EF2SDP-4BIK Contact

※ NAND FLASH + LPDDR2 SDRAM

NAND Density Organization Voltage DRAM Density Organization Voltage NAND Page Size DRAM Speed Package Part Number Availability

4Gbit 512Mb x 8 1.8V 4Gbit(2Gb DDP) 128Mb x 32 1.8V/1.2V 4KB 400MHz 8 x 10.5mm, 162B FMN4ET4DCx-25IJ Contact

4Gbit 512Mb x 8 1.8V 4Gbit 256Mb x 16 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN4ET4SCJ-25IH Production

4Gbit 512Mb x 8 1.8V 4Gbit 128Mb x 32 1.8V/1.2V 4KB 400MHz 8 x 10.5mm, 162B FMN4ET4TCP-25IG Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 4KB 533MHz 8 x 10.5mm, 162B FMN4ET2TCG-18IG Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN4ET2TCJ-18Ix Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN4ET2TCJ-25IG Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 4KB 400MHz 8 x 10.5mm, 162B FMN4ET2TCP-25IG Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 4KB 533MHz 8 x 10.5mm, 162B FMN4ET2TCP-18IH Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN4ET2TCK-25IG Production

4Gbit 512Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN4ET2TCK-18IG Production

4Gbit 512Mb x 8 1.8V 2Gbit 128Mb x 16 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN4ET2SCK-18IG Contact

2Gbit 256Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN2ET2TCx-25Ix Production

2Gbit 256Mb x 8 1.8V 2Gbit 64Mb x 32 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN2ET2TCJ-18IH Production

2Gbit 256Mb x 8 1.8V 2Gbit 128Mb x 16 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN2ET2SCK-18IG Contact

2Gbit 256Mb x 8 1.8V 1Gbit 32Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN2ET1TCx-25Ix Production

2Gbit 128Mb x 8 1.8V 1Gbit 64Mb x 16 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN2ET1SCJ-18IG Contact

1Gbit 128Mb x 8 1.8V 1Gbit 32Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN1ST1SCJ-25IE Production

1Gbit 128Mb x 8 1.8V 1Gbit 32Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN1ET1TCJ-25Ix Production

1Gbit 128Mb x 8 1.8V 1Gbit 64Mb x 16 1.8V/1.2V 2KB 533MHz 8 x 10.5mm, 162B FMN1ET1SCJ-18IG Contact

1Gbit 128Mb x 8 1.8V 512Mbit 16Mb x 32 1.8V/1.2V 2KB 400MHz 8 x 10.5mm, 162B FMN1ET5TCJ-25IG Contact

※ NAND FLASH + LPDDR SDRAM

NAND Density	Organization	Voltage	DRAM Density	Organization	Voltage	Page Size	Speed	Package	Part Number	Availability
4Gbit	256Mb x 16	1.8V	2Gbit	64Mb x 32	1.8V	2KB	200MHz	8x9mm, 130B	FMN4SD2DBK-50IB	Production
2Gbit	256Mb x 8	1.8V	1Gbit	64Mb x 16	1.8V	2KB	200MHz	8x9mm, 130B	FMN2ED1SBK-50IA	Production
2Gbit	256Mb x 8	1.8V	1Gbit	32Mb x 32	1.8V	2KB	200MHz	8x9mm, 130B	FMN2ED1TBK-50IA	Production
2Gbit	128Mb x 16	1.8V	1Gbit	64Mb x 16	1.8V	2KB	200MHz	8x9mm, 130B	FMN2SD1SBK-50IA	Production
1Gbit	128Mb x 8	1.8V	1Gbit	64Mb x 16	1.8V	2KB	200MHz	8x9mm, 130B	FMN1ED1SBJ-50IA	Production
1Gbit	64Mb x 16	1.8V	512Mbit	32Mb x 16	1.8V	2KB	200MHz	8x9mm, 130B	FMN1SD5SBJ-50IA	Production
1Gbit	64Mb x 16	1.8V	512Mbit	32Mb x 16	1.8V	2KB	200MHz	10.5x13mm, 137B	FMN1SD5SBJ-50IB	Production
1Gbit	64Mb x 16	1.8V	256Mbit	16Mb x 16	1.8V	2KB	200MHz	8x9mm, 130B	FMN1SD6SBJ-50IA	Production

NAND Density	Organization	Voltage	DRAM Density	Organization	Voltage	NAND Page Size	DRAM Speed	Package	Part Number	Availability
4Gbit	512Mb x 8	1.8V	4Gbit(2Gb DDP)	128Mb x 32	1.8V/1.2V	4KB	400MHz	8 x 10.5mm, 162B	FMN4ET4DCx-25IJ	Contact
4Gbit	512Mb x 8	1.8V	4Gbit	256Mb x 16	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN4ET4SCJ-25IH	Production
4Gbit	512Mb x 8	1.8V	4Gbit	128Mb x 32	1.8V/1.2V	4KB	400MHz	8 x 10.5mm, 162B	FMN4ET4TCP-25IG	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	4KB	533MHz	8 x 10.5mm, 162B	FMN4ET2TCG-18IG	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN4ET2TCJ-18Ix	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN4ET2TCJ-25IG	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	4KB	400MHz	8 x 10.5mm, 162B	FMN4ET2TCP-25IG	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	4KB	533MHz	8 x 10.5mm, 162B	FMN4ET2TCP-18IH	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN4ET2TCK-25IG	Production
4Gbit	512Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN4ET2TCK-18IG	Production
4Gbit	512Mb x 8	1.8V	2Gbit	128Mb x 16	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN4ET2SCK-18IG	Contact
2Gbit	256Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN2ET2TCx-25Ix	Production
2Gbit	256Mb x 8	1.8V	2Gbit	64Mb x 32	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN2ET2TCJ-18IH	Production
2Gbit	256Mb x 8	1.8V	2Gbit	128Mb x 16	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN2ET2SCK-18IG	Contact
2Gbit	256Mb x 8	1.8V	1Gbit	32Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN2ET1TCx-25Ix	Production
2Gbit	128Mb x 8	1.8V	1Gbit	64Mb x 16	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN2ET1SCJ-18IG	Contact
1Gbit	128Mb x 8	1.8V	1Gbit	32Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN1ST1SCJ-25IE	Production
1Gbit	128Mb x 8	1.8V	1Gbit	32Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN1ET1TCJ-25Ix	Production
1Gbit	128Mb x 8	1.8V	1Gbit	64Mb x 16	1.8V/1.2V	2KB	533MHz	8 x 10.5mm, 162B	FMN1ET1SCJ-18IG	Contact
1Gbit	128Mb x 8	1.8V	512Mbit	16Mb x 32	1.8V/1.2V	2KB	400MHz	8 x 10.5mm, 162B	FMN1ET5TCJ-25IG	Contact

▌FIDELIX ((주)피델릭스)

Fidelix基于NAND的MCP系列在节省空间、节省成本、高质量、高性能和功率效率方面具有优势。

Fidelix以无线通信技术为核心。专注于无线通讯市场存储的开发工作，并取得了明显成效。于2000年在韩国上市，提供了广泛的MCP产品组合，以满足客户的应用需求。被公认为通讯领域领先的半导体科技公司。

▌产品型号

※ NAND FLASH + LPDDR4X SDRAM

※ NAND FLASH + LPDDR2 SDRAM

※ NAND FLASH + LPDDR SDRAM

▌FIDELIX ((주)피델릭스)

Fidelix基于NAND的MCP系列在节省空间、节省成本、高质量、高性能和功率效率方面具有优势。

Fidelix以无线通信技术为核心。专注于无线通讯市场存储的开发工作，并取得了明显成效。 于2000年在韩国上市，提供了广泛的MCP产品组合，以满足客户的应用需求。被公认为通讯领域领先的半导体科技公司。

▌产品型号

※ NAND FLASH + LPDDR4X SDRAM

※ NAND FLASH + LPDDR2 SDRAM

※ NAND FLASH + LPDDR SDRAM

Fidelix以无线通信技术为核心。专注于无线通讯市场存储的开发工作，并取得了明显成效。于2000年在韩国上市，提供了广泛的MCP产品组合，以满足客户的应用需求。被公认为通讯领域领先的半导体科技公司。